Ultrafast carrier dynamics in GeAs

The paper on “Direct observation of electronic band gap and hot carrier dynamics in GeAs” has been published in Appl. Phys. Lett. 125, 182106 (2024).

Infinite layer nickelate interfaces

The paper on “Unraveling P‐Type and N‐Type Interfaces in Superconducting Infinite‐Layer Nickelate Thin Films” has been published in Advanced Materials (2024).

Ingap states in hexagonal diamond silicon

The study of “Acceptor and donor impurity levels in hexagonal-diamond silicon” appeared in Phys. Rev. Materials 8, 114601 (2024). The effect of p- and n-type substitutional doping on the structural …

Topological insulators under ultrafast light

The electronic structure of prototype topological insulators has been studied with ultrafast ARPES, using the ARTOF spectrometer in combination with the femtosecond laser source at the LPS. Using time-resolved multi-dimensional …