Ultrafast carrier dynamics in GeAs
The paper on “Direct observation of electronic band gap and hot carrier dynamics in GeAs” has been published in Appl. Phys. Lett. 125, 182106 (2024).
Ingap states in hexagonal diamond silicon
The study of “Acceptor and donor impurity levels in hexagonal-diamond silicon” appeared in Phys. Rev. Materials 8, 114601 (2024). The effect of p- and n-type substitutional doping on the structural …
New insight into charge transfer in h-BN
The paper on “Direct Quantifying Charge Transfer by 4D-STEM: A Study on Perfect and Defective Hexagonal Boron Nitride” appeared in ACS Nano 18, 7424 (2024)
Ultrafast VUV source at 11 eV
The paper on a new “Pulsewidth-switchable ultrafast source at 114 nm” has been published in Optics Letters 48, 4625 (2023)
Anahita Omoumi’s PhD
Anahita Omoumi defended her PhD thesis on December 15th, 2023. Congratulations, Anahita!
Dirac state manipulation by surface charge doping
In a paper published in Nano Letters , we show how chemisorption of potassium on BaNiS2 can tune Dirac bands in reciprocal space at the surface (J. Zhang, T. Sohier, …
Topological insulators under ultrafast light
The electronic structure of prototype topological insulators has been studied with ultrafast ARPES, using the ARTOF spectrometer in combination with the femtosecond laser source at the LPS. Using time-resolved multi-dimensional …